maximum ratings rating symbol value unit collector?emitter voltage v ceo ? 40 vdc collector?base voltage v cbo ? 40 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr ?5 board (1) p d 225 mw t a =25 c derate above 25c 1.8 mw/c thermal resistance junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt4403l t1 = 2t electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?0.1madc, i e = 0) ? 40 ? emitter?base breakdown voltage v (br)ebo vdc (i e = ?0.1madc, i c = 0) ? 5.0 ? base cutoff current i bev adc (v ce = ?35 vdc, v eb = ?0.4 vdc) ? ? 0.1 collector cutoff current i cex adc (v ce = ?35 vdc, v eb = ?0.4 vdc) ? ? 0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. sotC 23 general purpose transistors pnp silicon 2 emitter 3 collector 1 base device marking shipping m mbt4403lt1 2t 3000/ tape & reel ordering information ? rohs product for packing code suffix "g" halogen free product for packing code suffix "h" 2012-11 willas electronic corp. mm bt4403lt1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 30 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ?? (i c = ?150 madc, v ce = ?2.0 vdc)(3) 100 300 (i c = ?500 madc, v ce = ?2.0 vdc)(3) 20 ?? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = ?150madc, i b = ?15 madc) ?? ? 0.4 (i c = ?500 madc, i b = ?50 madc) ?? ? 0.75 base?emitter saturation voltage (3) v be(sat) vdc (i c = ?150 madc, i b = ?15 madc) ? 0.75 ? 0.95 (i c = ?500 madc, i b = ?50 madc) ?? ? 1.3 smallCsignal characteristics current?gain ? bandwidth product f t mhz (i c = ?20madc, v ce = ?10 vdc, f = 100 mhz) 200 ?? collector?base capacitance c cb pf (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) ?? 8.5 emitter?base capacitance c eb pf (v be = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 30 input impedance h ie k ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.5 15 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 8.0 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 60 500 output admittance h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.0 100 switching characteristics delay time (v cc = ? 30 vdc, v eb = ?2.0 vdc, t d ?1 5 rise time i c = ?150madc, i b1 = ?15 madc) t d ?2 0n s storage time (v cc = ?30 vdc, i c = ?150 madc, t s ? 225 ns fall time i b1 = i b2 = ?15 madc) t f ?3 0 figure 1. turnCon time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k ? 30 v 200 c s *< 10 pf 1.0 k ? 30 v 200 c s * < 10 pf 1n916 ?16 v ?16 v < 20 ns <2.0 ns +2.0v + 14v figure 2. turnCoff time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits 0 0 1.0 to 100 s, duty cycle = 2% +4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2012-11 willas electronic corp. general purpose transistors mm bt4403lt1
typical transient characteristics i c , collector current (ma) figure 4. charge data reverse voltage (volts) figure 3. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c eb c cb q a 10 20 30 50 70 100 200 300 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 capacitance (pf) t , time (ns) t r , rise time (ns) v cc = 30v i c / i b =10 t r @v cc =30v t r @v cc =10v t d @v be(off) = 2.0v t d @v be(off) = 0v i c /i b = 10 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 5. turnCon time i c , collector current (ma) figure 7. storage time t s , rise time (ns) t s ? = t s ? 1/8 t f i b1 = i b2 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 i c /i b = 10 i c /i b = 20 q, charge (nc) 2012-11 willas electronic corp. general purpose transistors mm bt4403lt1
MMBT4403LT1 unit 1 MMBT4403LT1 unit 2 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = ?10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of ransistors. to obtain these curves, a high?gain and a low?gain unit were selected from the mmbt4401lt1 lines, and the same units were used to develop the correspon dingly numbered curves on each graph. i c , collector current (madc) figure 10. current gain i c , collector current (madc) figure 12. voltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 1000 700 500 300 200 100 70 50 30 20 10 5.0 2.0 1.0 0.5 0.2 0.1 i c , collector current (madc) figure 11. input impedance h ie , input impedance (k ? ) 100 50 20 10 5 2 1 0.5 0.2 0.1 i c , collector current (madc) figure 13. output admittance h oe , output admittance ( mhos) 500 100 50 20 10 5.0 2.0 1.0 smallCsignal characteristics noise figure v ce = ?10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 MMBT4403LT1 unit 1 MMBT4403LT1 unit 2 MMBT4403LT1 unit 1 MMBT4403LT1 unit 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 r s , source resistance ( ? ) figure 9. source resistance effects nf, noise figure (db) f = 1.0 khz 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1k 2k 5k 10k 20k 50k 10 8 6 4 2 0 f , frequency (khz) figure 8. frequency effects i c = 50 a 100 a 500 a 1.0 ma i c = 1.0 ma, r s = 430 ? i c = 500 a, r s = 560 ? i c = 50 a, r s = 2.7k ? i c = 100 a, r s = 1.6 k ? r s = optimum source resistance MMBT4403LT1 unit 1 MMBT4403LT1 unit 2 2012-11 willas electronic corp. general purpose transistors mm bt4403lt1
static characteristics i c , collector current (ma) figure 14. dc current gain i b , base current (ma) figure 15. collector saturation region i c , collector current (ma) figure 16. on voltages i c , collector current (ma) figure 17. temperature coefficients h fe , normalized current gain v ce , collector emitter voltage (volts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce = 10 v 25c ?55c 10 ma 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v, voltage ( volts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vs for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 0.8 0.6 0.4 0.2 0 + 0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2012-11 willas electronic corp. general purpose transistors mm bt4403lt1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-11 willas electronic corp. general purpose transistors mm bt4403lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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